Description:
Tapered Amplifier Diodes, 730nm .. 1180nm, up to 3000mW, single mode, excellent beam profile, low seed power 5mW .. 50mW, Free space and fiber pigtailed versions available. Check our stock list for availability.
Technical Details
At one side of the laser chip, tapered diode lasers are identical to conventional Fabry Perot lasers. At the opposite side of the laser chip, they are broad area lasers. Inside of the chip, the internal waveguide is tapered for getting a propper matching between both side of the laser chip. Typical geometrical sizes of the laser chip are 2750µm x 500µm x 200µm (length x width x height). The laser chip is grown by MOVPE of compound semiconductor material. The optical gain is provided by double heterostructure which include several Quantum Wells for electronic confinement. The surfaces of the laser chip act as cavity mirrors due to the difference of the refractive index of the laser material and the surrounding air. The rear facet and the front facet of the laser chip are provided with an anti-reflcetion for avoiding laser action of the tapered amplifiyer itself. There are different versions available. The tapered laser chips are mounted as chip on carrier.
Specs & Stock List
Available from Stock |
Manufactured on Request |
Temporarily not Available
€ = EUR, $ = USD
Last shop update: 02/26/13
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